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                The Center for Nanoscale Materials (CNM) at Argonne National Laboratory seeks an outstanding postdoctoral researcher to advance data-driven, physics-informed AI for microelectronics materials 
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                Post Doctoral Researcher for its Nanoelectronics and Microelectronics program. Candidates with a strong background in materials, semiconductor physics, and devices, especially with relevant material 
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                environment; - strong expertise in cryogeny especially with dilution refrigerator. PhD in physics (low-noise electrical measurements, nanoscale thermal measurements, microelectronics techniques, nanofabrication 
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                University invites applications for postdoctoral positions. Our lab works in the areas of ultrafast science, nanoscale thermal transport, and microelectronics, for applications in energy-efficient computing 
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                The Fraunhofer Institute for Reliability and Microintegration (IZM) is a world-leading research institute in the field of packaging and interconnection technology for microelectronic systems 
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                the synthesis of the nanowires and their assembly into networks (by soft chemistry), while the synthesis of the matrix (CVD deposition) will mainly be carried out by a PhD student already recruited 
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                , including the study of side-channel attacks and the development of effective countermeasures. LabSoC also designs solutions to secure communications, external memory, and microelectronic architectures. In 
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                , Microelectronic and Nanotechnologies (IEMN) in Villeneuve d'Ascq/France. IEMN is a join-research institute from CNRS (French Scientific Research Council), two universities, and an engineering school in the Hauts-de 
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                technological research clusters in the fields of materials and nanomaterials, biotechnology, microelectronics and life sciences. Its work is geared towards applied research and innovation to meet market needs 
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                Offer Description The electronic structure of two-dimensional (2D) materials can be selectively modified by controlling their strain, thereby opening new perspectives in microelectronics. In this context