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laboratory. Transmission electron microscopy will be used for a structural, chemical, and electronic study of high electron mobility transistors (HEMTs) based on Niobium nitride (NbN) as part of this contract
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research project You will be involved in a project where compact silicon-nitride chip-based optical parametric amplifiers are at the center stage. We will explore these in several applications including
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Materials Spectroscopy (SMS) Laboratory, http://spectroscopy.kaust.edu.sa Institution: Division of Physical Science & Engineering, King Abdullah University of Science and Technology (KAUST) Thuwal, Saudi
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of innovative materials’ production along with the technology and design of microelectronics and photonic devices, gallium nitride technology, LTCC technology, printed electronics and medical and environmental
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Boron Nitride for Deep UVC Applications (ANR-24-CE08-3820) Where to apply Website https://emploi.cnrs.fr/Candidat/Offre/UMR8023-GIOFUG-002/Candidater.aspx Requirements Research FieldPhysicsEducation
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2D materials, including graphene, MXenes, TMDs, boron nitride–based materials, and carbon nanostructures, with demonstrated experience in electrocatalysis and catalytic materials for ammonia production
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National Aeronautics and Space Administration (NASA) | Pasadena, California | United States | about 5 hours ago
limited to silicon nitride on-chip etalons and waveguides, lithium niobate modulators and waveguides, heterogeneous integration/packaging of photonic microdevices, on-chip precision atomic and molecular
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Job Description Postdoc opportunity in ultrafast spectroscopy of quantum emitters in the layered material hexagonal Boron Nitride (hBN) and molecular systems. Recent experiments, also performed in
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. Among these materials, the aim here is to design new functionalities integrated within Gallium Nitride (GaN) vertical components. The scientific objectives of this position are summarized in one main task
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boron nitride with the intent of elucidating the link between structure and properties. The systems of choice will include twisted interfaces, chemical defects and lattice reorganizations which may be