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small twist, the resulting heterostructure can exhibit remarkable properties. Notably, a non-ferroelectric insulator can become ferroelectric solely due to interlayer sliding—without chemical modification
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another, the electronic properties of the resulting heterostructure can change dramatically. Remarkably, a large-bandgap insulator can become ferroelectric, solely due to this relative twist—without any
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, semiconductor physics, or materials science. Experience with thin-film capacitor testing, pulse measurement setups, or ferroelectric/memristive devices will be appreciated Website for additional job details https
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its employees in reconciling work and family life and regularly undergoes the audit berufundfamilie® . Further information at: http://www.ifw-dresden.de . The Nanostructured Thin Film Materials (NTFM
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(https://atomicfilmslab.org) and will work closely with the computational, device, and simulation teams, as well as with the education and mentorship teams comprising ASWESOME. This position will inform
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device modeling such as memristors and ferroelectric FETs such as with Verilog-A. Minimum Qualifications: Requires a minimum of a Ph.D. or equivalent terminal degree in electrical engineering, computer
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are superconductivity and superfluidity, fermion quadrupling condensate, magnetism, ferroelectrics, classical and quantum phase transitions, ultracold atoms, structure formation in soft matter, topological solitons