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Lomet, Research Engineer in AI at LIAD, CEA Saclay · Marianne Clausel (University of Lorraine), scientific lead of the national PEPR causali-t-ai program, · Myriam Tami, Associate Professor
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Dopant and Defect Physics for Device Optimization for Hafnium Oxide based Devices Devices realized with ferroelectric hafnium oxide are silicon compatible, power-efficient, and can be cost
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