72 phd-in-computational-mechanics-"FEMTO-ST"-"FEMTO-ST" Postdoctoral positions at Argonne
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at technical conferences. Position Requirements Recent or soon-to-be-completed PhD (typically completed within the last 0-5 years) in mechanical engineering, materials science, civil engineering, computer
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Applications are invited for post-doctoral positions in the Cosmological Physics and Advanced Computing Group (CPAC) Group in Argonne National Laboratory’s High Energy Physics (HEP) Division
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Laboratory’s Biosciences Division, allowing for seamless computational and experimental research integration Position Requirements A recent or soon to be completed PhD within the last 0-5 years Computational
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in computational research Comprehensive understanding of quantum mechanics and electronic structure theory is critical Experience with CFD (e.g., the use of OpenFoam or ALDFoam) and microkinetic
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The Center for Nanoscale Materials (CNM) at Argonne National Laboratory invites applications for a postdoctoral researcher position in the field of hybrid quantum computing. This exciting project
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The Center for Nanoscale Materials (CNM) at Argonne National Laboratory is seeking postdoctoral researchers to work on distributed quantum computing. The project aims to develop superconducting
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We are seeking a highly motivated Postdoctoral Researcher with expertise in computational biology, deep mutational scanning data, and generative artificial intelligence (AI). The successful
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formal education in chemical engineering, chemistry, materials science, nuclear engineering, mechanical engineering, or related field at the PhD degree level with zero to five years of experience
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is typically achieved through a formal education in physics, mechanical engineering, or chemical engineering, or a related field at the PhD level with zero to five years of employment experience with a
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campaigns using advanced synchrotron X-ray techniques to generate quantitative, AI-ready datasets that reveal defect-mediated mechanisms governing the stability, adhesion, and transport behavior of thin films