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Project Abstract: This PhD project addresses strategic UK priorities in advanced power semiconductor technologies supporting net zero, electrification, and grid resilience. The research will focus
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background in semiconductor physics or engineering. If you are interested in this exciting opportunity, we invite you to apply online at: https://www.sheffield.ac.uk/eee/pgr/apply. Funding Notes Full funding
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dynamically developed material in semiconductor industry marked by a Nobel Prize for invention of blue/white LEDs. III-N materials are currently attracting a lot of interest also for applications in power, high
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(Ga₂O₃) is a novel ultra-wide-bandgap semiconductor material with a bandgap energy (Eg) of approximately 5 eV and a theoretical critical breakdown field (Ecr) exceeding 8 MV/cm, which makes it highly
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identification with circularly polarized light, Journal of Biophotonics 14, e202000380 (2021). [3] F. Bottegoni et al., Spin-charge interconversion in heterostructures based on group-IV semiconductors, La Rivista
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bandgap (Eg) semiconductor materials. Gallium oxide (Ga2O3) is a good example of such material – with Eg ~4.9 eV and high critical field which surpasses those of the mainstream semiconductors for power
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-insulating vertical GaN devices are a class of power semiconductor devices that utilize Gallium Nitride (GaN) material in a vertical configuration, offering significant advantages for high-voltage, high
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(Ga2O3) is an emerging ultrawide bandgap (UWBG, Eg=4.8–5.3 eV) semiconductor material, recently recognized as a highly promising for high-voltage and high-power applications. This material can enable solid
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institution. The Cluster of Excellence REC² offers (subject to the availability of resources) at the Faculty of Electrical and Computer Engineering, Institute of Semiconductors and Microsystem (IHM), Chair
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. This PhD project aims at developing III-V semiconductor laser sources—especially frequency-comb lasers on InP substrates—and exploiting them for terahertz (THz) generation through optical beating