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-insulating vertical GaN devices are a class of power semiconductor devices that utilize Gallium Nitride (GaN) material in a vertical configuration, offering significant advantages for high-voltage, high
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single photons "on demand" and will enable efficient coupling with external optical systems. The breakthrough properties of this device will be provided by a hybrid structure in which a nitride laser or
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in which a nitride laser or resonant diode is integrated with a photonic structure in which an hBN layer with quantum emitters is placed. Maximization of photon extraction will be achieved thanks to
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electronic components are necessary. Thus, new components are developed from gallium nitride (GaN) to manufacture fast switches and rectifiers that can withstand high voltages for reduced component sizes
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deposition of stacks of thin films based on oxides, nitrides, and silver. The total stack thickness is less than 300 nm and it is composed by 10-30 different layers. Control of the mechanical properties is key
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sputter epitaxy (MSE) – a new sustainable core technology for production of group III-nitride semiconductors for power electronics and other applications, with special focus on strain management (including
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information at: http://www.ifw-dresden.de . The Institute for Metallic Materials (Prof. K. Nielsch) of the IFW Dresden offers a Post Doc Position (m/f/div) on the following topic: Project Coordination and Build