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) using metal–organic chemical vapor deposition (MOCVD). A particular emphasis will be on suppressing the formation of rotational domains associated with the substrate surface symmetry. The formation
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of the work deals with the growth and investigation of epitaxial III-N quantum structures prepared by metal-organic chemical-vapor deposition (MOCVD). GaN, as a constituting member of III-N family, is a most
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material will be grown by MOCVD at the Institute of Electrical Engineering of the Slovak Academy of Sciences (IEE SAS), v. v. i., on various substrates (Ga₂O₃, SiC, Si, sapphire), enabling the investigation
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