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-insulating vertical GaN devices are a class of power semiconductor devices that utilize Gallium Nitride (GaN) material in a vertical configuration, offering significant advantages for high-voltage, high
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of the work deals with the growth and investigation of epitaxial III-N quantum structures prepared by metal-organic chemical-vapor deposition (MOCVD). GaN, as a constituting member of III-N family, is a most
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electronic components are necessary. Thus, new components are developed from gallium nitride (GaN) to manufacture fast switches and rectifiers that can withstand high voltages for reduced component sizes
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experiments. The goal is to explore physics-informed self-supervised learning approaches (e.g., deep image priors, GANs) and iterative methods, combined with multi-scale tomography and local adaptive
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switching in the range up to several kVs (Si, SiC, GaN). Ga2O3-based devices can be also invaluable for faster deployment of electric means of transport thanks to development of faster charging systems and
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computing, and synchrotron-radiation experiments. The goal is to explore physics-informed self-supervised learning approaches (e.g., deep image priors, GANs) and iterative methods, combined with multi-scale
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-state diodes and transistors with unprecedented blocking voltages, far exceeding the capabilities of modern technologies based on SiC and GaN WBG semiconductors. Ga2O3 devices can thus enable development
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semiconductors such as GaN and SiC and to enable reliable operation at voltages >6 kV, where suitable alternative is currently unavailable. Such devices are expected to find applications in high-efficiency power
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, the PhD student at ETRO will contribute to the core of the AI pipeline by designing and validating generative models (e.g. latent diffusion-, autoencoder-, and GAN-based approaches) that can infer
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, the VUB is a member of EUTOPIA, an alliance of like-minded European universities, all ready to reinvent themselves. The position is part of the ETRO research group. RDI, a member of IMEC. ETRO. RDI (http