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of semiconductor technology through 2D materials? Join us in developing next-generation CMOS devices at the sub-1 nm node! Information The future of semiconductor technology depends on breakthrough materials
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Inria, the French national research institute for the digital sciences | Paris 15, le de France | France | 19 days ago
the Inria-AIO team (https://team.inria.fr/aio/ ) and will receive their PhD from Sorbonne University. The Inria-Paris center is located at the heart of Paris, in the 13th arrondissement. Some details of
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memory devices has only recently been explored, this doctoral project aims to advance that frontier. Initially, the research will explore CMOS–memristor hybrid implementations, leveraging their analog
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the feasibility of novel ultralow-power electronics based on quantum-mechanical tunnelling processes in advanced CMOS, which has a strong potential for Internet-of-Things devices and edge-artificial intelligence
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with top Flemish universities to match our research domains: 6G and Wireless Internet of Things communication Automotive CMOS and beyond CMOS 3D system integration Advanced nano-interconnects Advanced
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design using advanced CMOS technologies, along with a solid background in analog and digital signal processing systems. Comprehensive understanding of the entire IC design flow, including circuit design
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CMOS technologies. Well-versed in the end-to-end design flow, including circuit design, simulation, layout, PCB design, and measurement of integrated circuits using advanced CAD tools. Excellent
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environments Change: Development of pMOS GaN Technology to complement nMOS GaN Impact: Operate microelectronics in harsh environments Job description We seek you as a PhD candidate to investigate enabling CMOS
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. The applicant is expected to meet the following requirements: Deep technical documented proficiency in analog, RF, and mixed-signal IC design using advanced CMOS technologies. Well-versed in the end-to-end design
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them correspondingly for different applications; Evaluate different SiCOI materials; Fabricate SiCOI devices using CMOS compatible processing; Integrate different devices monolithically on SiCOI