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, catalysis and biology. We use molecular beam epitaxy (MBE) to synthesize atomically precise crystals, we integrate them with two-dimensional exfoliated materials, and we characterize them using transport and
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. All aspects of this work are performed 'in house' using NIST's state-of-the-art nanofabrication, molecular beam epitaxy, and low-temperature optical spectroscopy tools. The successful candidate will
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Postdoctoral Researcher with specialized expertise in the epitaxial growth and characterization of III-nitrides, particularly AlN, AlGaN, and GaN. High-quality epitaxial growth of the layers will be conducted
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electron spin resonance. For more information about the group, see: https://www.nist.gov/pml/nanoscale-device-characterization-division/nanoscale-processes-and-measurements-group/scanning . U.S. Citizen