3 structures "https:" "https:" "https:" "https:" "https:" "https:" "https:" "https:" "https:" scholarships at Institute of Electrical Engineering, Slovak Academy of Sciences
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for power electronics, RF amplifiers, and motor drives. By incorporating vertical structures, these devices achieve high current handling capabilities while maintaining efficient thermal management
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of the work deals with the growth and investigation of epitaxial III-N quantum structures prepared by metal-organic chemical-vapor deposition (MOCVD). GaN, as a constituting member of III-N family, is a most
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of self-heating effects. The research will also include an investigation of the impact of various edge termination and protection structures (field plates, guard rings, etc.) on the reverse breakdown
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