82 web-programmer-developer-"https:"-"https:"-"https:"-"https:"-"https:" positions at Argonne in United States
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to the development of new research directions aligned with program goals. Position Requirements Recent or soon-to-be-completed PhD (typically completed within the last 0-5 years) in Chemical Engineering, Materials
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The Applied Materials Division at Argonne National Laboratory has an immediate opening for a Postdoctoral Appointee. The candidate will be responsible for reviewing and developing design methods and
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, and autonomous materials discovery. This position, supervised by Ashley Bielinski and Alex Martinson focuses on the development of semiconductor materials and the repair of electronic defects
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. The project will involve development of novel parallel algorithms to facilitate in-situ analyses at-scale for multi-million and multi-billion atom simulations. In this role, you can expect to work on enhancing
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2.0) program. The collaboration team includes Clarence Chang, Tim Hobbs, Dafei Jin, Yi Li, Marharyta Lisovenko, Valentine Novosad, Zain Saleem, Tanner Trickle, and Gensheng Wang. We seek highly
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We are seeking a highly motivated Post-Doctoral Researcher to develop, implement, and advance the IDeA (Intelligent Design and Analysis) co-scientist project. The successful candidates will work
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four staff members [Ian Cloët, Alessandro Lovato, Anna McCoy, and Yong Zhao] and several postdocs and students. The group has a broad research program in QCD/hadron physics and nuclear structure
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computational research in accelerator science and technology. The focus is on developing and applying machine learning (ML) methods for accelerator operations and beam-dynamics optimization in advanced
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detectors while also having flexibility to pursue your own research interests. Research Focus Participate in a detector R&D program aimed at developing superconducting nanowire sensors to enable
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on developing machine-learning surrogates for electronic structure and electrostatic potential and using these models to predict structural and electronic evolution under applied bias. Methods may include density