5 structural-engineering-"https:"-"https:"-"https:"-"https:"-"https:"-"UCL" Postdoctoral positions at University of Bristol in United Kingdom
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including finite element simulations. You will have the opportunity to develop and test models for unique device structures including graded channel/multi-channel GaN RF HEMTs, as well as state-of-the-art GaN
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wide and ultra-wide bandgap semiconductor materials and devices, including GaN and Gallium Oxide. You will have the opportunity to work with unique device structures including graded channel and multi
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device structures will be designed and studied. Expertise in optical laser-based systems and thermal / thermomechanical simulations are of benefit for this position. You will have the opportunity to study
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the field in MOCVD growth of Gallium Oxide and related alloys, with application in next generation high voltage devices. This role focuses on developing new materials and material structures high voltage
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have the opportunity to develop and study unique device structures, and to access the extensive electrical device testing suite available in Bristol, in addition to thermal and electric field analysis