2 structural-engineering-"https:"-"https:"-"https:"-"https:"-"https:"-"L2CM" Postdoctoral positions at University of Bristol in United Kingdom

Postdoctoral Research Associate in TCAD Device Design of Power and RF Wide Bandgap Semiconductor Devices

University of Bristol | Bristol, England | United Kingdom | 1 day ago

including finite element simulations. You will have the opportunity to develop and test models for unique device structures including graded channel/multi-channel GaN RF HEMTs, as well as state-of-the-art GaN

Postdoctoral Research Associate in Electrical Measurement and Reliability of Power and RF Wide Bandgap Semiconductors Devices

University of Bristol | Bristol, England | United Kingdom | 1 day ago

wide and ultra-wide bandgap semiconductor materials and devices, including GaN and Gallium Oxide. You will have the opportunity to work with unique device structures including graded channel and multi