4 structures-"https:"-"https:"-"https:"-"https:"-"https:"-"https:" research jobs at University of Bristol in United Kingdom
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including finite element simulations. You will have the opportunity to develop and test models for unique device structures including graded channel/multi-channel GaN RF HEMTs, as well as state-of-the-art GaN
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economists based in Population Health Sciences in Bristol Medical School. This post is funded by a Wellcome Trust Discovery Award focussed on improving our understanding of the global impact of structural
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wide and ultra-wide bandgap semiconductor materials and devices, including GaN and Gallium Oxide. You will have the opportunity to work with unique device structures including graded channel and multi
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with high quality, structured mentoring. The role has no formal administrative responsibilities. However, the role holder will have the opportunity to contribute to the academic activities