75 algorithm-development-"St"-"St" positions at Chalmers University of Technology in Sweden
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Are you interested in the sustainability of the urban built environment? We offer a project assistant position that will allow you to deepen your knowledge and actively contribute to developing new
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systems against network-based threats. The research will explore network attack surfaces in distributed AI, assess their impact on system reliability and trustworthiness, and develop cross-layer defenses
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sector and to develop tools, processes and methods that support both organisations and practitioners, always in close collaboration with industry. About the research project The project explores how
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Doctoral student in Materials Chemistry of Doped Organic Semiconductors in EU Training Network FADOS
is to achieve targeted modification of semiconductor properties through doping. The goal of the project is to develop fundamental understanding and innovative fabrication processes to solve urgent
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, promises the development of a new class of devices and systems with a performance that surpasses limits that today are considered fundamental. In this postdoc project, the focus will be on implementing
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mainly experimental, and the group has extensive experience in the use and development of techniques at large-scale neutron and photon sources, vibrational spectroscopy, and optical techniques. Most
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") along the lines recently developed at the mathematics department. Who we are looking for The following requirements are mandatory: To qualify for the position of postdoc, you must hold a doctoral degree
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industry, academia, and government agencies. Our mission is to promote and integrate the life cycle perspective into all decision-making processes. We enable skills development and knowledge sharing among
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beyond the Standard Model of particle physics to the interpretation of cosmological and astrophysical data on the origin, composition, and evolution of the universe. At present, our studies concentrate
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on-wafer characterization of high-frequency transistor devices, including bias-dependent S-parameters, pulsed I/V, and load-pull measurements Develop empirical device models that capture static, dynamic and