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range. GaN is a wide bandgap seminconductor with a strong n-type High Electron Mobility Transistor technology, but the completementary p-type transistor is still early investigation. P-type GaN
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architectures are required, such as those inspired by the organization of the human brain that utilize novel materials. Ferroelectric Field-Effect Transistors (FeFETs) exemplify the latter, regarded as a pivotal
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