1 structures "https:" "https:" "https:" "https:" "https:" "University of Kent" PhD scholarships at INSA Rennes in France

PHD III-V/Si heterostructures: from optoelectronic properties to spin-polarised photodiodes.

INSA Rennes | Rennes, Bretagne | France | about 5 hours ago

[3] or GaAs [4] suffer from major defects. Due to its indirect band gap, Ge has limited absorption efficiency. GaAs structures, on the other hand, have been produced on expensive III-V substrates