71 structures "https:" "https:" "https:" "https:" "https:" "University of Kent" Postdoctoral positions in Finland
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Centre of Excellence in Neutron-Star Physics (https://neutronstars.fi ), funded by the Research Council of Finland. The CoE status provides us long-term funding, strong connections to related Finnish and
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of Excellence in Neutron-Star Physics (https://neutronstars.fi ), funded by the Research Council of Finland. The CoE status provides us long-term funding, strong connections to related Finnish and international
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for separately (www.helsinki.fi/en/research/doctoral-education/the-application-process-in-a-nutshell ). The requirements for pursuing a doctoral degree at the University of Helsinki can be found at https
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hakuohjeet yllä olevasta englanninkielisestä ilmoituksesta. Jätäthän hakemuksesi englanniksi. Hakuaika tehtävään päättyy 16.2.2026. Where to apply Website https://uef.varbi.com/en/what:job/jobID:892204
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pension fund, a generous holiday package, sports facilities, and opportunities for professional development (https://www.helsinki.fi/en/about-us/careers ). Required qualifications PhD (or near completion
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mathematical physics, including their formalization. This position is associated with Kalle Kytölä’s research group, part of the Finnish Centre of Excellence in Randomness and Structures (FiRST). The starting
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this department, the Electrochemical Materials and Applications (EMA) research group (https://www.aalto.fi/en/department-of-chemistry-and-materials-science/electrochemical-materials-and-applications ), led by Prof
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the Neuroscience Center in the University of Helsinki (see: https://www2.helsinki.fi/en/researchgroups/synaptic-plasticity-and-development ).The research interests are focused on functional maturation of neuronal
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Finland. More information here: https://www.helsinki.fi/en/about-us/careers/welcome-finland-information-arriving-staff How to apply The application must be submitted by 22 January. A round of interviews
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structure search techniques to identify the atomistic arrangements and electronic contact at the interface. This information will be used to build multi-scale models of the entire semiconductor device. In