Sort by
Refine Your Search
-
and processing strategies aimed at achieving high performance, cost-effectiveness, and manufacturability. The selected candidate will leverage the capabilities of the Materials Engineering Research
-
methodologies and tools for economic and ecological analyses of hydropower systems. The position will involve the development and use of computer models, simulations, algorithms, databases, economic models, and
-
closely with senior members of the research group. The term of the positions is typically two years, with the possibility to renew for the 3rd year, contingent on the project process and availability
-
The Chemical Sciences and Engineering Division invites you to apply to a postdoctoral appointee opening. The successful candidate will perform research in the Interfacial Processes Group
-
. Education: Ph.D. (< 5 yrs. since Ph.D.) • Familiarity with image processing and simulation software. • (Preferred) Experience with nanofabrication, transport measurements, thin film deposition, in-situ TEM
-
decarbonization applications. With guidance, the appointee will: Develop advanced multiscale, multiphysics simulation tools applicable to the modeling of chemical processes and equipment relevant to chemical
-
collaborators. Position Requirements Recent or soon-to-be-completed PhD (within the last 0-5 years) in field of experimental physics, engineering, or a related field Effective communication skills, both verbal
-
, integration of other emerging technologies, and interdependencies between power grid, transportation, and water systems. This position may require domestic and international travel. Provides support to develop
-
The Postdoctoral Appointee will be part of an R&D group conducting use-inspired research supporting the development of process technologies for next-generation nuclear/chemical/electrochemical
-
The Chemical Sciences and Engineering Division is seeking applicants for a postdoctoral appointee who will conduct computational research in Selective Interface Reactions (e.g., atomic layer