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research with real industrial practice. You will work on asset-heavy cases from sectors such as energy, manufacturing, and process industries, where maintenance is not just about fixing breakdowns but about
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Depending on the candidate, the physical workplace can be located either on the main campus of Aarhus University at C.F. Møllers Allé 3, 8000 Aarhus C, Denmark, or in the facilities of Aarhus University
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. Collecting and analyzing data from a full-scale (150 kWh capacity) pilot installation at DTU. Developing a computer model (“digital twin”) that link physical experiments with advanced control and operation
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received after the deadline, and not to consider applications that do not live up to the abovementioned requirements. The further process After deadline, a number of applicants will be selected for academic
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to the abovementioned requirements. The further process After deadline, a number of applicants will be selected for academic assessment by an unbiased expert assessor. You are notified, whether you will be passed
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Depending on the candidate, the physical workplace can be located either on the main campus of Aarhus University at C.F. Møllers Allé 3, 8000 Aarhus C, Denmark, or in the facilities of Aarhus University
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to the abovementioned requirements. The further process After the expiry of the deadline for applications, the authorised recruitment manager selects applicants for assessment on the advice of the hiring committee. All
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. We reserve the right not to consider material received after the deadline, and not to consider applications that do not live up to the abovementioned requirements. The further process After deadline, a
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the department, with the assistance of the hiring committee, will select the applicants to be assessed. All applicants will be informed whether they have been shortlisted for assessment or not. The hiring process
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. Professor Haiyan Ou, DTU Electro. Responsibilities and tasks Thanks to the unique photonic properties and physical properties of SiC, versatile devices could be achieved on the SiC material platform