Sort by
Refine Your Search
-
Description The National Institute of Standards and Technology (NIST) is developing next-generation microfabricated magnetic devices and magnetic resonance imaging (MRI) contrast agents and sensors based
-
of hormones in biological matrices. Hormones are essential for major developmental and reproductive processes. Because hormones are highly similar in structure and found at nanomolar concentrations
-
considerable challenges for existing measurement methods. We are developing the measurement techniques to characterize the physical processes related to light absorption and carrier dynamics in both second and
-
integrated nanophotonic devices and systems with novel mechanisms to generate, detect and manipulate light on chip, for classical and quantum information processing. All projects involve development of new
-
of atomically precise patterning to deterministically place dopant atoms in a Si lattice to make prototype atom-based solid state devices and qubits, measurement of the properties of individual atomically precise
-
patient’s target cells to treat intractable diseases, such as cancer and genetic diseases. Infectious titer is a critical measurement of viral vector function and potency. Such functional measures of viral
-
(for variable pressure SEM), the effect of e-beam shape on imaging, the effects of electric fields and charging, and electron detectors. key words Electron detector modeling; Electron scattering; Electron
-
NIST only participates in the February and August reviews. Metals-based additive manufacturing (AM) processes, or metals 3D printing, such as laser powder bed fusion and directed energy deposition
-
the pattern through etching or deposition processes into the functional material of interest. NIL is a simple stamping technique amenable to patterning a wide range of materials. However, NIL often imposes
-
semiconductors (InAs quantum dots, ErAs nanoparticles) and superconductors (WSi, MoSi, NbTiN) for single-photon detectors, all of which are developed at NIST. In addition to device processing and electrical and