53 phd-position-in-cryptography Postdoctoral positions at Oak Ridge National Laboratory
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Requisition Id 15282 Overview: The Fusion Energy Division (FED) at the Oak Ridge National Laboratory invites applications for a Nuclear Engineering position in the Blanket & Fuel Cycle Group. FED is
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advanced materials into on-chip photonic platforms to harness quantum effects through monolithic fabrication and design. This position resides in the Nanofabrication Research Laboratory, Nanomaterials
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. This project uses crystal growth and physical property measurements to develop, understand, and control new and emerging materials. This position resides in the Correlated Electron Materials Group in
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development. Basic Qualifications: A PhD in computer science/engineering, electrical engineering, data science or a related field completed within the last five years. Experience of AI and efficient computing
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: To be eligible you must have completed a PhD in materials science, chemistry, physics, engineering, or a related field with in the last 5 years. Visa sponsorship is not available for this position
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materials growth and characterization, condensed matter theorists, and experts in quantum sensing. This position resides in the Quantum Heterostructures Group, Materials Science and Technology (MST) Division
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computations relevant to the development of strategic nuclear performance codes for nuclear reactors. This position resides in the Radiation Effects and Microstructural Analysis Group (REMAG) in the Materials in
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. Promote equal opportunity by fostering a respectful workplace – in how we treat one another, work together, and measure success. Basic Qualifications: A PhD in mechanical engineering, industrial engineering
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), Fusion and Fission Energy and Science Directorate, Oak Ridge National Laboratory (ORNL), seeks applicants for a post-doctoral position with emphasis in experimental and theoretical molten salt
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this role, you will study buried interfaces in monolithic 3D heterogeneous integration (M3D HI) systems, with a particular emphasis on vertically stacked 2D/3D semiconductor heterostructures. This position