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Desired level of education : PhD in physics or related fields Experience required : PhD and/or postdoc experience in one or more of the following areas: theoretical quantum optics, theoretical atomic and
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Inria, the French national research institute for the digital sciences | Villeneuve la Garenne, le de France | France | about 13 hours ago
special attention from both mathematical and computational standpoints. Where to apply Website https://jobs.inria.fr/public/classic/en/offres/2025-09335 Requirements Skills/Qualifications PhD in machine
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will develop and operate a reproducible computational workflow that combines molecular and periodic electronic-structure calculations, and when appropriate time‑dependent methods. The workflow will be
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and Climat program as well as other ongoing projects involving the supervisors, such as the OceanIA team of INRIA https://oceania.inria.cl/ . Finally, he/she will also work closely with a PhD student
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(PhD-level position) in Marseille, France, to work on the European Research Council funded Starting Grant project 'SIESTA: The Role of Microbial Dormancy as an Ecological and Biogeochemical Regulator
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are seeking a postdoc (M/W) in geomicrobiology (PhD-level position) in Marseille, France, to work on the European Research Council funded Starting Grant project 'SIESTA: The Role of Microbial Dormancy as an
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Contract type : Fixed-term contract Level of qualifications required : PhD or equivalent Fonction : Post-Doctoral Research Visit About the research centre or Inria department The Inria centre
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, please contact Prof. Dr Janne Fengler at Your profile Excellent PhD in Educational Sciences, preferably with reference to one of the following subject areas: experiential education / outdoor education
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tailored solutions to industry, research centers, and universities, addressing critical challenges in energy, microelectronics, life sciences, and industrial processes. Within the SIPT Unit, you will be part
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Dopant and Defect Physics for Device Optimization for Hafnium Oxide based Devices Devices realized with ferroelectric hafnium oxide are silicon compatible, power-efficient, and can be cost