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of Research ExperienceNone Research FieldTechnologyYears of Research ExperienceNone Additional Information Eligibility criteria Qualifications: - PhD in materials science or devices nanofabrication. - Hands
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, are intended for use in measuring the thermal conductivity of nanometrically structured semiconductor materials. The technological development of ultra-low temperature thermometers is at the heart of the lab
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, material sciences, electrochemistry and micro/nanofabrication. All skills are required for the mission. Additional expertise in bio/nano interfacing will be an asset. Overall, the candidate should possess a
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chemistry. -Designing functional polymer materials through macromolecular engineering and self-assembly. The recruited postdoctoral researcher will join Team 2 – Biopolymers and Bio-based Polymers, led by
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Information Eligibility criteria • PhD in condensed matter physics, materials science, or a related field; • Strong knowledge of thin-film growth techniques (PLD, MBE, or similar methods); • Experience in
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(Engineering Center, sections 10, 9, and 11), the University of Grenoble Alpes, Physics, Engineering, Materials (PEM) research center, and Grenoble, INP Institute of Engineering and Management, UGA. The LRP
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Eligibility criteria PhD in Materials Science, Process Engineering, or a similar field. Required Skills: Proficiency in ceramic and composite material development processes, as well as structural, mechanical
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Eligibility criteria The required degree is a PhD in mechanics, physics, materials science, or a related discipline. The recruited candidate should have the following skills: * Knowledge of X-ray diffraction
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Information Eligibility criteria PhD in Chemistry, Materials Science, Nanotechnology, or related field Strong expertise in zeolite synthesis, porous materials, or nanomaterials Motivation to work in a
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Ph.D. in Physics, Materials Science, Engineering, or a related field. We do not expect a single candidate to possess every skill and experience, but rather a quick learner with a strong foundation in at