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FieldPhysicsYears of Research ExperienceNone Research FieldTechnologyYears of Research ExperienceNone Additional Information Eligibility criteria • Holds a PhD in quantum electronic or related field • Good capacity
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out ab initio calculations using Quantum ESPRESSO/ EPW,/YAMBO/VASP on hBN supercells containing various defects, in order to evaluate their formation energies, electron–phonon couplings, and optical
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their partners by using a combination of computational analyses, single molecule imaging and molecular approaches such as Electron Microscopy. The project will be realized in collaboration with research groups
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. Possible contribution to the supervision of Master and PhD students. Communication of results in high-impact scientific journals and international conferences. Laser frequency stabilization onto atomic vapor
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specialized training and mentoring and will be integrated into the project network. A personal computer will be made available to the researcher Where to apply Website https://emploi.cnrs.fr/Candidat/Offre
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ExperienceNone Additional Information Eligibility criteria - PhD in theoretical chemistry or theoretical physics, with experience in methodological developments is a plus. - Solid knowledge in electronic structure
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-EHESS, located in Paris in the 6th arrondissement. CAMS is a multidisciplinary research unit bringing together mathematicians, physicists, computer scientists and researchers in cognitive and social
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/simulation programming - characterisation of various samples - supervising student (intership, PhD candidate) - writing articles - taking part in conferences This work will take place at ISMO within
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cells) - Synchrotron measurements (e.g., diffraction, tomography, inelastic x-ray scattering, and/or absorption spectroscopy) - Measurements at X-ray Free Electron Laser (XFEL) facilities - Pulse-echo
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versatile structures with numerous applications in microelectronics, MEMS (Microelectromechanical Systems), and nanotechnology. These membranes are produced by selectively etching the top silicon layer of SOI