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volcanology and magmatic processes through the combination of detailed field studies on modern and ancient volcanoes with numerical modelling techniques. Key components of this position include leading
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the mechanisms that drive eruptions and flares. To achieve this, a numerical model must capture the fundamental physical, radiative, and ionisation states of the Sun’s vastly different atmospheric layers, as
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for understanding the energy flow and accumulation that underpin the heating of the solar chromosphere and corona, and for uncovering the mechanisms that drive eruptions and flares. To achieve this, a numerical model
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applications, with a strong emphasis on the use of state-of-the-art numerical tools for device-level and system-level design. The candidate will contribute primarily to multiphysics simulations and modeling
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advanced numerical framework for the simulation ofFSI problems,basedon the use ofthe Discontinuous Galerkin(DG)method for the discretization ofthe fluid domain.The structural domainwill be modeled using
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at Laboratoire de Physique de l'Ecole Normale Supérieure (LPENS) in Paris, while theory and numerical modeling will be carried out by CELIA and ILM. The necessary high-performance computing (HPC) resources will be
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to original material properties depending upong thermal and photo stimulations through the development of numerical models for simulation. Numerical simulation enables precise analysis and prediction
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integration, improved numerical approximation, advantages for shape optimisation), Development of surrogate/reduced-order models (including data-driven approaches, significant computation time reduction
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regularization. In the morpheme group we have proposed model-driven approach (e.g., COL0RME [1]) as well as model-based data-driven approaches (e.g., GANs [2] or Plug& Play [3]). A different and increasingly
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Institut d'Electronique et de Télécommunications de Rennes | Rennes, Bretagne | France | about 19 hours ago
developed in the laboratory [1], combined with the electronic model describing the fault in CMOS inverters. At the same time, this modelling work will be based on TCAD Sentaurus numerical simulation work