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laboratory. Transmission electron microscopy will be used for a structural, chemical, and electronic study of high electron mobility transistors (HEMTs) based on Niobium nitride (NbN) as part of this contract
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single photons "on demand" and will enable efficient coupling with external optical systems. The breakthrough properties of this device will be provided by a hybrid structure in which a nitride laser or
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in which a nitride laser or resonant diode is integrated with a photonic structure in which an hBN layer with quantum emitters is placed. Maximization of photon extraction will be achieved thanks to
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School graduates over a thousand students who are ready to take on great ambitions and challenges. For more details, please view: https://www.ntu.edu.sg/eee We are looking for a Research Fellow to support
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electronic components are necessary. Thus, new components are developed from gallium nitride (GaN) to manufacture fast switches and rectifiers that can withstand high voltages for reduced component sizes
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deposition of stacks of thin films based on oxides, nitrides, and silver. The total stack thickness is less than 300 nm and it is composed by 10-30 different layers. Control of the mechanical properties is key
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. Design and hybrid assembly of microwave oscillators and frequency multipliers based on gallium nitride technology. Where to apply Website https://sede.uvigo.gal/public/catalog-detail/27660208 Requirements
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-properties relationship remains challenging. Moreover, graphene can be combined with other two-dimensional materials, such as semiconducting phosphorene or insulating boron nitride, into multi-layer
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Materials Spectroscopy (SMS) Laboratory, http://spectroscopy.kaust.edu.sa Institution: Division of Physical Science & Engineering, King Abdullah University of Science and Technology (KAUST) Thuwal, Saudi
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integrated photonic devices based on silicon nitride (SiN) technology for applications in the optical O-band (1250 nm – 1350 nm). The activity includes the design of test structures and the experimental