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Postdoctoral Researcher with specialized expertise in the epitaxial growth and characterization of III-nitrides, particularly AlN, AlGaN, and GaN. High-quality epitaxial growth of the layers will be conducted
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electronic components are necessary. Thus, new components are developed from gallium nitride (GaN) to manufacture fast switches and rectifiers that can withstand high voltages for reduced component sizes
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microelectronics and photonic devices, gallium nitride technology, LTCC technology, printed electronics and medical and environmental sensors. Łukasiewicz–IMiF runs numerous projects financed from domestic and
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the ASTRID ProCoPe project (Collective Processes for Power Components), led by the III-V Lab, which aims to fabricate power components with diamond heat sinks, based on Gallium Nitride (GaN), and to develop
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Materials Spectroscopy (SMS) Laboratory, http://spectroscopy.kaust.edu.sa Institution: Division of Physical Science & Engineering, King Abdullah University of Science and Technology (KAUST) Thuwal, Saudi
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Technology. In the area of Photonic Devices, we are seeking candidates with substantial research experience in emerging technologies such as silicon, silicon nitride, and lithium niobate photonic devices
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, THz Circuits, Photonic Integrated Circuits, SerDes, Memory Circuits and Computer Architecture High-voltage ICs, Gallium-Nitride (GaN) and Silicon-Carbide (SiC) driver ICs and monolithic GaN ICs Imagers
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deposition of stacks of thin films based on oxides, nitrides, and silver. The total stack thickness is less than 300 nm and it is composed by 10-30 different layers. Control of the mechanical properties is key
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sputter epitaxy (MSE) – a new sustainable core technology for production of group III-nitride semiconductors for power electronics and other applications, with special focus on strain management (including
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duties of the position are the following: Performs experiments to reduce transition and rare earth metal ions to metals. Performs nitridation studies on some or all of them. FLSA Nonexempt Salary Details