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IT4Innovations National Supercomputing Center, VSB - Technical University of Ostrava | Czech | 19 days ago
new era for nitrides - towards more efficient thermoelectricity and phonoelectricity, guiding the design of advanced materials for energy conversion applications in a close collaboration with
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operating conditions. Project description This position is also closely related to the Vinnova competence Centre for III-nitride technology, C3NiT (c3nit.se). The project involves designing advanced circuits
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photonic devices based on III-Nitrides semiconductors. This will include MOCVD growth, chip fabrication, and testing of GaN and its alloys for optoelectronic applications as well as projects on UV laser
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-properties relationship remains challenging. Moreover, graphene can be combined with other two-dimensional materials, such as semiconducting phosphorene or insulating boron nitride, into multi-layer
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laboratory. Transmission electron microscopy will be used for a structural, chemical, and electronic study of high electron mobility transistors (HEMTs) based on Niobium nitride (NbN) as part of this contract
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to assess their suitability as cathodes. Assess the possibilities of contamination using steel, tungsten carbide, zirconia and silicon nitride media via a combination of XRF, ICP-MS and SEM/EDS analysis
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solving. Experience with Gallium Nitride (GaN) MOSFETs in switched-mode power supplies. Main responsibilities: To integrate new technical capabilities into a small agile company like ISTL and ensure
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energy, ICT, and life sciences. About the research project The research is about integrated cooling and heat dissipations solutions using low-dimensional materials such as graphene, hexagonal boron nitride
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Postdoctoral Researcher with specialized expertise in the epitaxial growth and characterization of III-nitrides, particularly AlN, AlGaN, and GaN. High-quality epitaxial growth of the layers will be conducted
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materials such as graphene, hexagonal boron nitride and carbon nanotubes for cooling of power modules. Who we are looking for The following requirements are mandatory: Ph.D. within one of following fields