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-insulating vertical GaN devices are a class of power semiconductor devices that utilize Gallium Nitride (GaN) material in a vertical configuration, offering significant advantages for high-voltage, high
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, gallium nitride technology, LTCC technology, printed electronics and medical and environmental sensors. Łukasiewicz–IMiF runs numerous projects financed from domestic and foreign funds annually, the goals
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Engineering (PHELIQS, https://www.pheliqs.fr/en ), a joint research unit of the French Commission for Atomic Energies and Alternative Energies (CEA), Université Grenoble Alpes and Grenoble INP, is currently
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. Synergistic pharmaceutical interactions with nanoscale iron nitrides and natural organic matter. The Chemical Engineering Journal 523, 168285. https://doi.org/10.1016/j.cej.2025.168285 Required skills: applied
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of Schottky diodes and MOS capacitors on 4H-SiC substrates; • Controlled engineering of surface and interface defects using techniques such as focused ion beam (FIB), plasma nitridation, and plasma oxidation
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researcher to join our team at the Institut Européen des Membranes (IEM). The successful candidate will contribute to the AMSTOR project, which aims to develop functionalized hexagonal boron nitride (h-BN
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films (oxides, nitrides, carbides, germinides) deposited on Si and SiC wafers. The candidate will plan and conduct research using X-ray reflectivity, X-ray fluorescence spectroscopy, and X-ray
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IT4Innovations National Supercomputing Center, VSB - Technical University of Ostrava | Czech | 28 days ago
for interested candidates for a research project in the field of QUANTUM THERMAL AND ELECTRONIC TRANSPORT, THERMOELECTRICITY within the Czech Science National grant No. 26-21973S - A new era for nitrides - towards
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IT4Innovations National Supercomputing Center, VSB - Technical University of Ostrava | Czech | about 1 month ago
new era for nitrides - towards more efficient thermoelectricity and phonoelectricity, guiding the design of advanced materials for energy conversion applications in a close collaboration with
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photonic devices based on III-Nitrides semiconductors. This will include MOCVD growth, chip fabrication, and testing of GaN and its alloys for optoelectronic applications as well as projects on UV laser