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) in Paris. It will be co-supervised by Catherine AMIENS, from the LCC's 'Engineering of Metallic Nanoparticles' team (https://www.lcc-toulouse.fr/ en/engineering-of-metal-nanoparticles-team-l/ ) and
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researcher to join our team at the Institut Européen des Membranes (IEM). The successful candidate will contribute to the AMSTOR project, which aims to develop functionalized hexagonal boron nitride (h-BN
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Engineering (PHELIQS, https://www.pheliqs.fr/en ), a joint research unit of the French Commission for Atomic Energies and Alternative Energies (CEA), Université Grenoble Alpes and Grenoble INP, is currently
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photonic devices based on III-Nitrides semiconductors. This will include MOCVD growth, chip fabrication, and testing of GaN and its alloys for optoelectronic applications as well as projects on UV laser
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solving. Experience with Gallium Nitride (GaN) MOSFETs in switched-mode power supplies. Main responsibilities: To integrate new technical capabilities into a small agile company like ISTL and ensure
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single photons "on demand" and will enable efficient coupling with external optical systems. The breakthrough properties of this device will be provided by a hybrid structure in which a nitride laser or
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-properties relationship remains challenging. Moreover, graphene can be combined with other two-dimensional materials, such as semiconducting phosphorene or insulating boron nitride, into multi-layer
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in which a nitride laser or resonant diode is integrated with a photonic structure in which an hBN layer with quantum emitters is placed. Maximization of photon extraction will be achieved thanks to
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laboratory. Transmission electron microscopy will be used for a structural, chemical, and electronic study of high electron mobility transistors (HEMTs) based on Niobium nitride (NbN) as part of this contract
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materials such as graphene, hexagonal boron nitride and carbon nanotubes for cooling of power modules. Who we are looking for The following requirements are mandatory: Ph.D. within one of following fields