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29 Aug 2025 Job Information Organisation/Company CNRS Department Institut de mathématiques de Jussieu - Paris Rive Gauche Research Field Physics Researcher Profile First Stage Researcher (R1) Country France Application Deadline 18 Sep 2025 - 23:59 (UTC) Type of Contract Temporary Job...
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strains in the elastic medium. We will adapt them to the modelling of gravity changes, following the approach indicated by Bonafede and Mazzanti (1998), and followed by Trasatti and Bonafede (2008) and
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18 Sep 2025 Job Information Organisation/Company CNRS Department Institut de Combustion, Aérothermique, Réactivité et Environnement Research Field Physics Researcher Profile Recognised Researcher
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4 Sep 2025 Job Information Organisation/Company CNRS Department Laboratoire de Réactivité de Surface Research Field Chemistry Physics Researcher Profile First Stage Researcher (R1) Country France Application Deadline 24 Sep 2025 - 23:59 (UTC) Type of Contract Temporary Job Status Full-time Hours...
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an atomistic model of the electrode/electrolyte interface in the batteries developed by ITEN, at the anode and at the cathode. Both electrodes are based on lithium-based transition metal oxides. These models
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improve this chain and derive dead fuel estimates, which will be integrated into forest fire spread simulations conducted by another postdoc at the Météopole. Both postdocs will collaborate closely. Since
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data from numerical geodynamo simulations, and to an intercomparison of the several candidate models in an application to the geomagnetic field as seen from satellite observations. These evaluations will
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significantly deformed by tides? We will address this question using an experimental model approach. The agent will be responsible for: - installing the metrology equipment (PIV and conductivity probe
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modeling (Strasbourg) investing the role of sensorimotor beta bursts in predictive processing: align protocols, metadata, and analysis plans; contribute to cross‑species comparative work. * Advance and
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treatment and analysis. The samples can range from model systems like 2D materials or thin lamella of semiconducting samples, going closer to devices like phase-change random access memory (PCRAM