Sort by
Refine Your Search
-
Listed
-
Category
-
Country
-
Program
-
Field
-
photonic devices based on III-Nitrides semiconductors. This will include MOCVD growth, chip fabrication, and testing of GaN and its alloys for optoelectronic applications as well as projects on UV laser
-
for Applications: December 23rd, 2025 Closing Date for Applications: January 25th, 2026, 23h00m (Lisbon Time) Key words: #2Dmaterialsdevices #nanoelectronics #graphenebiosensors #neuromorphic #CVD #MOCVD #LPE
-
structures growth by MOCVD technology and their comprehensive investigation, GaN-based structures application for THz devices like modulators, phase shifters and waveguides. Center for Physical Sciences and
-
Materials, Bioinspired Materials and Sustainable Materials. For more details, please view https://www.ntu.edu.sg/mse/research. The Research Fellow will undertake advanced research in the field of quantum
-
its employees in reconciling work and family life and regularly undergoes the audit berufundfamilie® . Further information at: http://www.ifw-dresden.de . The Nanostructured Thin Film Materials (NTFM
-
Łukasiewicz Research Network - Institute of Microelectronics and Photonics | Poland | about 2 months ago
to apply Website https://system.erecruiter.pl/FormTemplates/RecruitmentForm.aspx?WebID=732ff932f… Requirements Research FieldChemistryEducation LevelBachelor Degree or equivalent Research FieldEngineering
-
contributing to the next generation of computing technology. You will work on CVD and MOCVD growth of 2D materials (e.g. transition metal dichalcogenides, metal oxylselenides), focusing on achieving both n-type
-
the Forschungsverbund Berlin (https://www.fv-berlin.de/ ) and the Leibniz Association www.leibniz-gemeinschaft.de . You can find more details on the institute webpage: www.ikz-berlin.de . The Section Fundamental
-
package, including health and life insurance, generous paid leave and retirement programs. To learn more about USC benefits, access the "Working at USC" section on the Applicant Portal at https
-
metal dichalcogenide (TMD) tungsten disulfide (WS2) via metal organic chemical vapor deposition (MOCVD) To develop approaches to generate defects in WS2 To investigate the structural, electronic and