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nanofabrication processing. This position offers the opportunity to actively participate in a world-class cleanroom. Customization, development and maintenance of microsystems technology processes in cooperation
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of the ANR Lamorsim project (https://anr.fr/Project-ANR-23-CE08-0029 ). The main objective of this project is to develop methodologies for achieving controlled laser-induced amorphization of silicon. In this
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of microsystems technology processes in cooperation with our research groups Responsibility for miscellaneous equipment in the cleanroom laboratories, incl. maintenance work, stocking of chemicals and consumables
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partnership with the Sons team at the Laboratory of Mechanics and Acoustics (LMA) in Marseille, the Institute of Electronics, Microelectronics and Nanotechnology (IEMN) in Lille, and the Acoustics Department
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national semiconductor strategy. Tyndall is recognised as an international research leader in nanotechnology, microelectronics, photonics, electronics and AI semiconductor, chip and digital technologies
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data science - neuroscience and neural engineering - bio-statistics and AI-healthcare - smart/semi-conductor manufacturing - AI/robotics/autonomous systems - aerospace and microelectronics engineering
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for teaching and developing curriculum in one of the following areas: Microelectronics, System Engineering, Digital Supply Chain, Marine Automation Systems and Advanced Manufacturing. Microelectronics: Advanced
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Procedure Applications must be exclusively submitted on the admissions platform of the Instituto Superior Técnico at https://fenix.tecnico.ulisboa.pt/fenixedu-admissions and requires registration and
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advanced expertise on the technologies studied in the project (which are commercial). Furthermore, the post-doc will indeed rely on the LAAS PROOF platform (https://www.laas.fr/projects/proof/ ) which
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of photonics, materials, nanoelectronics, microsystems, and nanofluidics. C2N has a staff of nearly 400 people and hosts one of the largest university nanotechnology facilities in France, with a 2900 m