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defects induced by the connection of two crystal lattices of different geometry and orientation. We will then study the interaction of these defects with hydrogen, and their impact on hydrogen diffusion
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(GeV), tin-vacancy (SnV), etc.). A G4V center is a point defect in the diamond lattice, consisting of a Group-IV atom (e.g., Si) and two adjacent vacancies [2]. This defect introduces energy levels
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