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partitioning at relatively low (≤900°C) temperatures in contrast to most available high-temperature partitioning (≥ 900°C) extrapolated to low-temperature processes (600°C). The experimental zircon/melt
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symmetry and excitation processes on vibrational spectra, as well as participate in the development of methods integrating new laser technology. The candidate will work within the framework of the ANR
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, the impact of the swelling of clay particles upon hydration, as well as the alteration processes associated to the circulation of alkaline water, with two main actions. 1- Analysis of the thermo-hydro
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systems. Laboratory simulations under astrophysically relevant conditions will provide key insights into asymmetric photochemistry and post-irradiation alteration processes. Where to apply Website https
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the physicochemical properties of alternative blowing agents and the final foam performance. They will also test the new formulations under conditions that simulate industrial processes (casting, spraying, high
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well as proven experience with ultrafast experimental techniques dedicated to the study of phonons. The desired skills include: Extensive experience (≥ 4 years) in the implementation and operation of pump–probe
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station, computer, access to computer cluster Where to apply Website https://emploi.cnrs.fr/Candidat/Offre/UMR8197-VALHER-191/Candidater.aspx Requirements Research FieldBiological sciencesEducation LevelPhD
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samples to establish a new cryofixation and cryosectioning method - Analysis of samples using Tof-SIMS and data processing - Interpretation and presentation of results with project partners The postdoctoral
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to the processing and analysis of data from the test phases. • Ensure implementation in compliance with ethical standards, IT security, and data confidentiality. • Contribute to documentation, project reports, and
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300mm etching reactors located in CEA/Leti's clean rooms. It will involve : 1) Create the lithographic design adapted to requirements (GDS) 2) develop/optimize plasma etching processes for AlGaN and GaN