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now. Please see the job description above on how to apply. Contact: Elena Bunina Email: Postal Mail: Department of Mathematics Bar-Ilan University Ramat-Gan 5290002 Israel Web Page: http
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contribute to research aiming to push the state of the art in diffusion bonding for GaN-based power components. Further information about SiPFAB, related to collaboration with ABB, can be found here: System-in
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electronic components are necessary. Thus, new components are developed from gallium nitride (GaN) to manufacture fast switches and rectifiers that can withstand high voltages for reduced component sizes
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, THz Circuits, Photonic Integrated Circuits, SerDes, Memory Circuits and Computer Architecture High-voltage ICs, Gallium-Nitride (GaN) and Silicon-Carbide (SiC) driver ICs and monolithic GaN ICs Imagers
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system combining piezoelectricity and relatively high mobility electron gas: AlGaN/GaN. This will enable several functionalities, the first one being the ability to modulate the 2DEG electronic density
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Research Group, University of Bristol, to develop high-performance SiC and GaN power electronics, with the associated high-speed sensing. You will be offered one of the following three salary grades
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the ASTRID ProCoPe project (Collective Processes for Power Components), led by the III-V Lab, which aims to fabricate power components with diamond heat sinks, based on Gallium Nitride (GaN), and to develop
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on the safest and most efficient way to distribute protected power to all units Technologies for power conversion. Working on the use of GaN and SiC switches, digital control, new topologies, etc. Apart from
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interpretation of data. Collaborate with partners within the project and others as appropriate The post holder will join the Microwaves & Antenna Engineering Group (https://microwaves.site.hw.ac.uk/) and will be
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of semiconductor components. Wide bandgap semiconductor materials such as GaN are the ideal candidates to meet this new challenge. The work concerns new manufacturing processes for high electron mobility transistor