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» Veterinary pharmacologyYears of Research Experience1 - 4 Additional Information Additional comments https://bandi.unipi.it/public/Bandi/Detail/043f99fb-cc7d-4762-9a7b-81b2… Work Location(s) Number of offers
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Research Group, University of Bristol, to develop high-performance SiC and GaN power electronics, with the associated high-speed sensing. You will be offered one of the following three salary grades
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discriminant models Design and use of autoencoders (VAEs, GANs), diffusion models, and other ML methods for analysing and discovering patterns in probability distributions in latent space. We are not accepting
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III-N par HVPE (Hydride Vapor Phase Epitaxy) au sein de l'Institut Pascal. Les matériaux étudiés sont le GaAs et l'InAs d'une part et le GaN et l'InN d'autre part, ainsi que leurs alliages respectifs
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now. Please see the job description above on how to apply. Contact: Elena Bunina Email: Postal Mail: Department of Mathematics Bar-Ilan University Ramat-Gan 5290002 Israel Web Page: http
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Bar Ilan University, Ruhman CMT group Position ID: Bar Ilan University-Ruhman CMT group-CMT [#30516] Position Title: Position Type: Postdoctoral Position Location: Ramat Gan, HaMerkaz 5290002
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electronic components are necessary. Thus, new components are developed from gallium nitride (GaN) to manufacture fast switches and rectifiers that can withstand high voltages for reduced component sizes
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photonic devices based on III-Nitrides semiconductors. This will include MOCVD growth, chip fabrication, and testing of GaN and its alloys for optoelectronic applications as well as projects on UV laser
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contribute to research aiming to push the state of the art in diffusion bonding for GaN-based power components. Further information about SiPFAB, related to collaboration with ABB, can be found here: System-in
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application Related works: [1] Phan, D. D. et al., LSPD: A Large-Scale Pornographic Dataset for Detection and Classification — https://inass.org/wp-content/uploads/2021/09/2022022819.pdf [2] Gangwar, A. et al