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electronic components are necessary. Thus, new components are developed from gallium nitride (GaN) to manufacture fast switches and rectifiers that can withstand high voltages for reduced component sizes
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system combining piezoelectricity and relatively high mobility electron gas: AlGaN/GaN. This will enable several functionalities, the first one being the ability to modulate the 2DEG electronic density
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School graduates over a thousand students who are ready to take on great ambitions and challenges. For more details, please view: https://www.ntu.edu.sg/eee We are looking for a Research Fellow to support
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of semiconductor components. Wide bandgap semiconductor materials such as GaN are the ideal candidates to meet this new challenge. The work concerns new manufacturing processes for high electron mobility transistor
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together 8 leading academic bodies (France 2030), the VERTIGO project aims to develop a new generation of power components based on a GaN semiconductor, with unique functionalities and performance. Advanced
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inverter topologies (e.g. Dual inverter, 4 bridge inverter) with modern semiconductor devices (GaN, SiC) The aim is to implement own designed algorithms in a signal processor and simulation environment
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models (CNNs, Transformers, GANs) for PET and CT dose reduction - Work with raw PET/CT data, projection data, and reconstructed images - Perform quantitative image evaluation and clinical validation
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. Nitride materials (III-N), which include GaN, are now the second most widely used family of semiconductors after silicon. These wide bandgap semiconductors are now used in various types of devices
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Helmholtz-Zentrum Dresden-Rossendorf - HZDR - Helmholtz Association | Gorlitz, Sachsen | Germany | 6 days ago
generative AI models (e.g., VAEs, GANs, Diffusion Models) to create novel protein sequences, fold structures, and functional molecules # Engage with our international collaborators (Berlin, Dresden, London
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into the physical mechanisms involved in the reliability of GaN chips, in order to assess their criticality and thereby better define and understand safe operating domains that ensure the required reliability