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-insulating vertical GaN devices are a class of power semiconductor devices that utilize Gallium Nitride (GaN) material in a vertical configuration, offering significant advantages for high-voltage, high
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falls short. Gallium nitride (GaN), a III-V semiconductor, is proven to be the material of choice for high- frequency, high-power, and high-temperature applications. GaN also offers a number of excellent
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Description III-N materials: GaN, AlN, InN and their alloys have been presented as interesting semiconductors for the development of optoelectronic devices thanks to their characteristics: their wide direct
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and Artificial Intelligence. Where to apply Website https://www.abg.asso.fr/fr/candidatOffres/show/id_offre/137704 Requirements Specific Requirements Candidate profile Applicants should hold a PhD in
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of the work deals with the growth and investigation of epitaxial III-N quantum structures prepared by metal-organic chemical-vapor deposition (MOCVD). GaN, as a constituting member of III-N family, is a most
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-informed neural networks (PINNs) and potentially generative adversarial networks (Pi-GANs). These models aim to predict cell fate and tumor development in CRC. The postdoc will collaborate with both
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of other semiconductor materials (e.g., h-BN, MoS₂, GaN). Expertise in: - Experimental optics - Data processing are expected Website for additional job details https://emploi.cnrs.fr/Offres/CDD/UMR7249
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» Veterinary pharmacologyYears of Research Experience1 - 4 Additional Information Additional comments https://bandi.unipi.it/public/Bandi/Detail/043f99fb-cc7d-4762-9a7b-81b2… Work Location(s) Number of offers
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electronic components are necessary. Thus, new components are developed from gallium nitride (GaN) to manufacture fast switches and rectifiers that can withstand high voltages for reduced component sizes
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Research Group, University of Bristol, to develop high-performance SiC and GaN power electronics, with the associated high-speed sensing. You will be offered one of the following three salary grades