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discriminant models Design and use of autoencoders (VAEs, GANs), diffusion models, and other ML methods for analysing and discovering patterns in probability distributions in latent space. We are not accepting
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switching in the range up to several kVs (Si, SiC, GaN). Ga2O3-based devices can be also invaluable for faster deployment of electric means of transport thanks to development of faster charging systems and
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now. Please see the job description above on how to apply. Contact: Elena Bunina Email: Postal Mail: Department of Mathematics Bar-Ilan University Ramat-Gan 5290002 Israel Web Page: http
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Bar Ilan University, Ruhman CMT group Position ID: Bar Ilan University-Ruhman CMT group-CMT [#30516] Position Title: Position Type: Postdoctoral Position Location: Ramat Gan, HaMerkaz 5290002
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-state diodes and transistors with unprecedented blocking voltages, far exceeding the capabilities of modern technologies based on SiC and GaN WBG semiconductors. Ga2O3 devices can thus enable development
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semiconductors such as GaN and SiC and to enable reliable operation at voltages >6 kV, where suitable alternative is currently unavailable. Such devices are expected to find applications in high-efficiency power
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III-N par HVPE (Hydride Vapor Phase Epitaxy) au sein de l'Institut Pascal. Les matériaux étudiés sont le GaAs et l'InAs d'une part et le GaN et l'InN d'autre part, ainsi que leurs alliages respectifs
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photonic devices based on III-Nitrides semiconductors. This will include MOCVD growth, chip fabrication, and testing of GaN and its alloys for optoelectronic applications as well as projects on UV laser
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, the PhD student at ETRO will contribute to the core of the AI pipeline by designing and validating generative models (e.g. latent diffusion-, autoencoder-, and GAN-based approaches) that can infer
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contribute to research aiming to push the state of the art in diffusion bonding for GaN-based power components. Further information about SiPFAB, related to collaboration with ABB, can be found here: System-in