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-insulating vertical GaN devices are a class of power semiconductor devices that utilize Gallium Nitride (GaN) material in a vertical configuration, offering significant advantages for high-voltage, high
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falls short. Gallium nitride (GaN), a III-V semiconductor, is proven to be the material of choice for high- frequency, high-power, and high-temperature applications. GaN also offers a number of excellent
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and Topology analysis Diseño y gobierno de semiconductores de GaN/ Design and driving of GaN semiconductors LanguagesENGLISHLevelExcellent Research FieldEngineering » Electronic engineeringEngineering
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. [8] J. Yu and T. Huang, “Autoslim: Towards one-shot architecture search for channel numbers,” 2019. [Online]. Available: https://arxiv.org/abs/1903.11728 [9] H. Cai, C. Gan, T. Wang, Z. Zhang, and S
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Description III-N materials: GaN, AlN, InN and their alloys have been presented as interesting semiconductors for the development of optoelectronic devices thanks to their characteristics: their wide direct
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-nitrides (GaN) have demonstrated disruptive performance in terms of frequency, power, and efficiency figure of merits. We will now investigate advanced device concepts to further harvest the potential of III
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and Artificial Intelligence. Where to apply Website https://www.abg.asso.fr/fr/candidatOffres/show/id_offre/137704 Requirements Specific Requirements Candidate profile Applicants should hold a PhD in
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, including both chip-to-wafer (C2W) and chip-to-chip (C2C) approaches. Core technical directions Heterogeneous integration of wide-bandgap (WBG) electronic components (e.g., GaN/SiC and related platforms
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of the work deals with the growth and investigation of epitaxial III-N quantum structures prepared by metal-organic chemical-vapor deposition (MOCVD). GaN, as a constituting member of III-N family, is a most
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-informed neural networks (PINNs) and potentially generative adversarial networks (Pi-GANs). These models aim to predict cell fate and tumor development in CRC. The postdoc will collaborate with both