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contribute to research aiming to push the state of the art in diffusion bonding for GaN-based power components. Further information about SiPFAB, related to collaboration with ABB, can be found here: System-in
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system combining piezoelectricity and relatively high mobility electron gas: AlGaN/GaN. This will enable several functionalities, the first one being the ability to modulate the 2DEG electronic density
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application Related works: [1] Phan, D. D. et al., LSPD: A Large-Scale Pornographic Dataset for Detection and Classification — https://inass.org/wp-content/uploads/2021/09/2022022819.pdf [2] Gangwar, A. et al
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, investigate their properties in THz range and develop THz-based communication systems. GaN-nanostructures based THz devices: Development, processing and experimental investigation of GaN nanostructures-based
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, including device protection, impedance control and EMI mitigation; architect low‑inductance current paths, gate‑drive schemes (e.g., GaN/Si MOSFET drivers), and snubbers tailored to OLED stack constraints and
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Research Group, University of Bristol, to develop high-performance SiC and GaN power electronics, with the associated high-speed sensing. You will be offered one of the following three salary grades
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, THz Circuits, Photonic Integrated Circuits, SerDes, Memory Circuits and Computer Architecture High-voltage ICs, Gallium-Nitride (GaN) and Silicon-Carbide (SiC) driver ICs and monolithic GaN ICs Imagers
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solving. Experience with Gallium Nitride (GaN) MOSFETs in switched-mode power supplies. Main responsibilities: To integrate new technical capabilities into a small agile company like ISTL and ensure
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3D modeling, shader programming, real-time graphics and generative AI including GAN model architectures. Personally, you thrive in a collaborative, interdisciplinary setting and have the drive to lead
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researched by well-optimized experiments and be assessed on various RF devices, such as GaN transistors. The candidate: should have a MSc degree in Electrical Engineering or equivalent; should be ranked within