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Helmholtz-Zentrum Dresden-Rossendorf - HZDR - Helmholtz Association | Gorlitz, Sachsen | Germany | 8 days ago
generative AI models (e.g., VAEs, GANs, Diffusion Models) to create novel protein sequences, fold structures, and functional molecules # Engage with our international collaborators (Berlin, Dresden, London
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Center for Advanced Systems Understanding, Helmholtz Center Dresden-Rossendorf | Germany | 10 days ago
for de Novo Protein Design. Your tasks Design of generative AI models (e.g., VAEs, GANs, Diffusion Models) to create novel protein sequences, fold structures, and functional molecules Engage with our
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Semiconductor and Material Spectroscopy group investigate the wide band gap semiconductor based on GaN and related materials for optoelectronic applications. Our group set collaborations with different
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Helmholtz Zentrum München - Deutsches Forschungszentrum für Gesundheit und Umwelt | Stein bei N rnberg, Bayern | Germany | 8 days ago
, diffusion, GAN) Good understanding of the mathematical foundations of machine learning Mastering python and related AI software technologies Proficiency in English Experience in parallel training of large DL
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reflect this diversity. For more information about the Rotman School and its core values, please visit: http://www.rotman.utoronto.ca/Connect/AboutRotman/OurValues . All qualified candidates are invited
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). This is focused on development of GaN-, AlGaN- and AlN semiconductor devices, for power and RF applications. You will be working with setting up and managing chip fabrication and device modeling using
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Description The Institute of Electronic Structure and Laser of the Foundation for and Technology Hellas (IESL - FORTH), in the framework of the project “ALL2GaN - Affordable smart GaN IC solutions as enabler
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(CHIMES2 IKC) (https://chimes-ikc.org/) you will apply leading edge Heterogeneous Integration Strategies to solve the PhD challenges. Achieving net zero carbon emissions by 2050 requires electrification
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unsolicited services. Where to apply Website https://www.academictransfer.com/en/jobs/356202/phd-position-gan-based-electric… Requirements Additional Information Website for additional job details https
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National Aeronautics and Space Administration (NASA) | Pasadena, California | United States | 1 day ago
but not limited to cutting-edge GaN, GaAs, InGaAs, InP, AlN, diamond, etc semiconductor technologies that potentially can be heterogeneously integrated with stable laser systems. The goal is to develop