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now. Please see the job description above on how to apply. Contact: Elena Bunina Email: Postal Mail: Department of Mathematics Bar-Ilan University Ramat-Gan 5290002 Israel Web Page: http
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contribute to research aiming to push the state of the art in diffusion bonding for GaN-based power components. Further information about SiPFAB, related to collaboration with ABB, can be found here: System-in
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electronic components are necessary. Thus, new components are developed from gallium nitride (GaN) to manufacture fast switches and rectifiers that can withstand high voltages for reduced component sizes
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during the same epitaxy cycle as GaN-based active devices, h-BN is on the verge of being commercialized on a large scale. Given the complexity of the MOVPE epitaxy environment, there is a need to deepen
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Research Group, University of Bristol, to develop high-performance SiC and GaN power electronics, with the associated high-speed sensing. You will be offered one of the following three salary grades
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, THz Circuits, Photonic Integrated Circuits, SerDes, Memory Circuits and Computer Architecture High-voltage ICs, Gallium-Nitride (GaN) and Silicon-Carbide (SiC) driver ICs and monolithic GaN ICs Imagers
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system combining piezoelectricity and relatively high mobility electron gas: AlGaN/GaN. This will enable several functionalities, the first one being the ability to modulate the 2DEG electronic density
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Materials Spectroscopy (SMS) Laboratory, http://spectroscopy.kaust.edu.sa Institution: Division of Physical Science & Engineering, King Abdullah University of Science and Technology (KAUST) Thuwal, Saudi
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the ASTRID ProCoPe project (Collective Processes for Power Components), led by the III-V Lab, which aims to fabricate power components with diamond heat sinks, based on Gallium Nitride (GaN), and to develop
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interpretation of data. Collaborate with partners within the project and others as appropriate The post holder will join the Microwaves & Antenna Engineering Group (https://microwaves.site.hw.ac.uk/) and will be