Sort by
Refine Your Search
-
Listed
-
Category
-
Country
-
Program
-
Field
-
falls short. Gallium nitride (GaN), a III-V semiconductor, is proven to be the material of choice for high- frequency, high-power, and high-temperature applications. GaN also offers a number of excellent
-
-insulating vertical GaN devices are a class of power semiconductor devices that utilize Gallium Nitride (GaN) material in a vertical configuration, offering significant advantages for high-voltage, high
-
, gallium nitride technology, LTCC technology, printed electronics and medical and environmental sensors. Łukasiewicz–IMiF runs numerous projects financed from domestic and foreign funds annually, the goals
-
given to research involving the MBE synthesis of new materials and heterostructures, such as gallium/aluminum/nickel/germanium oxides and their heterostructures, nitrides containing scandium, niobium
-
solving. Experience with Gallium Nitride (GaN) MOSFETs in switched-mode power supplies. Main responsibilities: To integrate new technical capabilities into a small agile company like ISTL and ensure
-
the ASTRID ProCoPe project (Collective Processes for Power Components), led by the III-V Lab, which aims to fabricate power components with diamond heat sinks, based on Gallium Nitride (GaN), and to develop
-
Łukasiewicz Research Network - Institute of Microelectronics and Photonics | Poland | about 2 months ago
microelectronics and photonic devices, gallium nitride technology, LTCC technology, printed electronics and medical and environmental sensors. Łukasiewicz–IMiF runs numerous projects financed from domestic and
-
, THz Circuits, Photonic Integrated Circuits, SerDes, Memory Circuits and Computer Architecture High-voltage ICs, Gallium-Nitride (GaN) and Silicon-Carbide (SiC) driver ICs and monolithic GaN ICs Imagers