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model that explains lattice distortions and branching mechanisms. (4) Analyze experimental data using advanced computational tools and present results in research meetings and scientific publications
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(XRD) and macroscopic magnetic measurements. To separate the effects of “chemical” pressure from those of lattice expansion, XAS will also be conducted under applied external pressure. Additionally, high
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defects induced by the connection of two crystal lattices of different geometry and orientation. We will then study the interaction of these defects with hydrogen, and their impact on hydrogen diffusion
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(GeV), tin-vacancy (SnV), etc.). A G4V center is a point defect in the diamond lattice, consisting of a Group-IV atom (e.g., Si) and two adjacent vacancies [2]. This defect introduces energy levels