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, or registration of the doctorate degree, under the applicable legislation. This formality must be fulfilled up to the date of signing the contract. 2 — Formalization of the applications: 2.1 — The Applications must
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the contest holding qualifications obtained abroad must prove the recognition, equivalence, or registration of the doctorate degree, under the applicable legislation. This formality must be fulfilled up
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Associação do Instituto Superior Técnico para a Investigação e Desenvolvimento _IST-ID | Portugal | 4 days ago
eventually renewed until the end of the project. It is mandatory to formalize applications with the submission of the following documents: i) B1 Form – Fellowship application (https://ist-id.pt/recursos
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, equivalence, or registration of the doctorate degree, under the applicable legislation. This formality must be fulfilled up to the date of signing the contract. 2 — Formalization of the applications: 2.1
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. This formality must be completed by the signing date of the contract. 4.1. General admission requirements are those defined in point 4. For the purpose of determining the appropriate profile for the activity to be
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, equivalence, or registration of the doctorate degree, under the applicable legislation. This formality must be fulfilled up to the date of signing the contract. 2 — Formalization of the applications: 2.1
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, under the applicable legislation. This formality must be fulfilled up to the date of signing the contract. 2 — Formalization of the applications: 2.1 — The Applications must be accompanied by
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obtained abroad must prove the recognition, equivalence, or registration of the doctorate degree, under the applicable legislation. This formality must be fulfilled up to the date of signing the contract. 2
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System. 11. Formalization of applications: 11.1. Deadline: 15 (fifteen) working days from the date of publication of this notice in the Official Gazette. 11.2. Form: Applications must be
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probed by Brillouin light scattering and by pump-and-probe methods of standard and topological phonons in silicon and 2D materials; Advance experimental methods to study topological phonon waveguides and